公开(公告)号：US09576848B2

公开(公告)日：2017-02-21

申请号：US14847130

申请日：2015-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Yim ,  Thomas Oszinda ,  Byunghee Kim ,  Sanghoon Ahn ,  Naein Lee ,  Keeyoung Jun

IPC: H01L21/76 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843

Abstract: A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.

Abstract translation: 一种处理多孔电介质层的方法包括制备其上形成有开口的多孔介电层和由该开口暴露的孔的基板，将第一前体供应到基板上以形成密封暴露孔的第一副密封层， 以及将第二前体供应到所述第一子密封层上以形成覆盖所述第一子密封层的第二副密封层。 第一和第二前体中的每一个包括硅，并且第二前体的分子量小于第一前体的分子量。

公开(公告)号：US10465290B2

公开(公告)日：2019-11-05

申请号：US15469212

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjong Kim ,  Seonggil Park ,  Jaebeom Park ,  Jung-soo Yoon ,  Keeyoung Jun ,  Choongrae Cho ,  Jongwon Hong

IPC: C23C16/50 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

公开(公告)号：US20160148837A1

公开(公告)日：2016-05-26

申请号：US14847130

申请日：2015-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Yim ,  Thomas Oszinda ,  Byunghee Kim ,  Sanghoon Ahn ,  Naein Lee ,  Keeyoung Jun

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843

Abstract: A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.

Abstract translation: 一种处理多孔电介质层的方法包括制备其上形成有开口的多孔介电层和由该开口暴露的孔的基板，将第一前体供应到基板上以形成密封暴露孔的第一副密封层， 以及将第二前体供应到所述第一子密封层上以形成覆盖所述第一子密封层的第二副密封层。 第一和第二前体中的每一个包括硅，并且第二前体的分子量小于第一前体的分子量。