公开(公告)号：US20250163323A1

公开(公告)日：2025-05-22

申请号：US19026794

申请日：2025-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Jungmin OH ,  Sangwon BAE ,  Hyosan LEE

IPC: C09K13/10 ,  C09K13/08 ,  H01L21/306 ,  H10B12/00

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

公开(公告)号：US20200079999A1

公开(公告)日：2020-03-12

申请号：US16387892

申请日：2019-04-18

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Yongtae KIM ,  Junghun LIM ,  SOOJIN KIM ,  JUNG-MIN OH ,  SEUNGMIN JEON ,  HAYOUNG JEON

IPC: C09K13/08 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

公开(公告)号：US20230272280A1

公开(公告)日：2023-08-31

申请号：US18098847

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Jungmin OH ,  Sangwon BAE ,  Hyosan LEE

IPC: C09K13/10 ,  H01L21/306 ,  H10B12/00 ,  C09K13/08

CPC classification number: C09K13/10 ,  C09K13/08 ,  H01L21/30604 ,  H10B12/05 ,  H10B12/30

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt% to about 14 wt% of an oxidant, about 0.01 wt% to about 5 wt% of a fluorine compound, about 0.01 wt% to about 5 wt% of an amine compound, about 0.01 wt% to about 1 wt% of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt% to about 90 wt% of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

公开(公告)号：US20230272278A1

公开(公告)日：2023-08-31

申请号：US18081899

申请日：2022-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Mihyun PARK ,  Sangwon BAE ,  Jungmin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/3205

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76883 ,  H01L21/32051

Abstract: An etching composition for etching a molybdenum film, the etching composition includes about 0.1 wt % to about 5 wt % of an oxidant; about 10 wt % to about 40 wt % of a chelate agent, the chelate agent including a mineral acid; about 0.01 wt % to about 3 wt % of a corrosion inhibitor, the corrosion inhibitor including an ammonium salt, an amine compound, or a combination thereof; and an organic solvent, all wt % being based on a total weight of the etching composition.