公开(公告)号：US09298612B2

公开(公告)日：2016-03-29

申请号：US14015536

申请日：2013-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Sung Shin ,  Sang-Joon Hwang ,  Seung-Man Shin ,  In-Su Choi ,  Jung-Ho Jung

IPC: G06F13/38 ,  G06F12/06 ,  G11C11/00 ,  G06F3/00 ,  G11C29/44

CPC classification number: G06F12/06 ,  G06F2212/205 ,  G11C11/005 ,  G11C2029/4402

Abstract: A semiconductor memory device includes a first memory block of a first type of memory; and a second memory block of a second type of memory having a different type from the first type. A first address region of the first memory block and a second address region of the second memory block are included in the same address domain. Each of the first and second memory blocks is accessed by an address signal including an address of the address domain, and the second memory block is a nonvolatile memory.

Abstract translation: 半导体存储器件包括第一类型存储器的第一存储器块; 以及具有与第一类型不同类型的第二类型存储器的第二存储块。 第一存储块的第一地址区和第二存储块的第二地址区被包括在相同的地址域中。 第一和第二存储块中的每一个被包括地址域的地址的地址信号访问，而第二存储块是非易失性存储器。