公开(公告)号：US20240371731A1

公开(公告)日：2024-11-07

申请号：US18507549

申请日：2023-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin SHIN ,  Heonjong SHIN ,  June Young PARK ,  Jaeran JANG

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a support member, an active region, source and drain regions, and a gate electrode. The support member may include a substrate insulation layer including separating insulators and a power wire disposed at a space between the separating insulators. The active region may be disposed on the power wire. The source and drain regions may be positioned adjacent to the active region. The gate electrode may be disposed on the active region.

公开(公告)号：US20250056843A1

公开(公告)日：2025-02-13

申请号：US18438920

申请日：2024-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Min SHIN ,  Heon Jong SHIN ,  June Young PARK ,  Jae Ran JANG ,  Sang Hee LEE ,  Kerm RIM ,  Sung Gyu HAN

IPC: H01L29/786 ,  H01L21/8234 ,  H01L23/48 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes: a lower interlayer insulating layer; first and second active patterns on the lower interlayer insulating layer; a gate electrode on the first and second active patterns; a first source region on a first side of the gate electrode; a second source region on a second side of the gate electrode; a third source region on the first side of the gate electrode; a drain region on the second side of the gate electrode; a first contact adjacent to the gate electrode, and connected to the first and third source regions; a second contact adjacent to the gate electrode, and connected to the second source region; a third contact adjacent to the gate electrode, and connected to the drain region; a lower wiring layer inside the lower interlayer insulating layer; and a through via connecting the lower wiring layer with the first contact.