公开(公告)号：US20200027784A1

公开(公告)日：2020-01-23

申请号：US16242122

申请日：2019-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-jeong PARK ,  Dong-chan LIM ,  Kwang-jin MOON ,  Ju-bin SEO ,  Ju-ll CHOI ,  Atsushi FUJISAKI

IPC: H01L21/768

Abstract: An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.