公开(公告)号：US20230143907A1

公开(公告)日：2023-05-11

申请号：US17720872

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Joosung Kim ,  Younghwan Park ,  Junghun Park ,  Dongchul Shin ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/04 ,  H01L27/15 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/24 ,  H01L33/44

Abstract: Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.

公开(公告)号：US20250169244A1

公开(公告)日：2025-05-22

申请号：US18955332

申请日：2024-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Joosung Kim ,  Junhee Choi ,  Nakhyun Kim ,  Eunsung Lee

IPC: H01L33/44 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes: a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and a first passivation layer disposed on a side surface of the light-emitting stack structure.

公开(公告)号：US12125942B2

公开(公告)日：2024-10-22

申请号：US17352708

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjo Tak ,  Joosung Kim ,  Jonguk Seo ,  Sungjin Ahn ,  Donggun Lee ,  Jeongwook Lee ,  Youngjin Choi ,  Yongseok Choi ,  Jonghoon Ha

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/14 ,  H01L33/385 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

公开(公告)号：US20240113264A1

公开(公告)日：2024-04-04

申请号：US18375194

申请日：2023-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/50 ,  H01L25/16

CPC classification number: H01L33/502 ,  H01L25/167 ,  H01L2933/0041

Abstract: A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.

公开(公告)号：US12218274B2

公开(公告)日：2025-02-04

申请号：US17032332

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun Lee ,  Gibum Kim ,  Joosung Kim ,  Jonguk Seo

IPC: H01L33/24 ,  H01L25/16 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38

Abstract: A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.

公开(公告)号：US11742469B2

公开(公告)日：2023-08-29

申请号：US17036090

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun Lee ,  Gibum Kim ,  Joosung Kim ,  Juhyun Kim ,  Tan Sakong ,  Jonguk Seo ,  Youngjo Tak

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/48 ,  H01L33/54 ,  H01L33/52 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/486 ,  H01L33/54

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

公开(公告)号：US20230238484A1

公开(公告)日：2023-07-27

申请号：US17967318

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghwan Park ,  Joosung Kim ,  Dongchul Shin ,  Junhee Choi

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/20 ,  H01L33/325 ,  H01L33/382 ,  H01L33/0075 ,  H01L27/156

Abstract: Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

公开(公告)号：US12249671B2

公开(公告)日：2025-03-11

申请号：US17582172

申请日：2022-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han ,  Kiho Kong ,  Junghun Park

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

公开(公告)号：US11935910B2

公开(公告)日：2024-03-19

申请号：US17027960

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Joosung Kim ,  Donggun Lee ,  Suhyun Jo

IPC: H01L29/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/405 ,  H01L33/42 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.

公开(公告)号：US11726620B2

公开(公告)日：2023-08-15

申请号：US17673053

申请日：2022-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanguk Kim ,  Younghak Park ,  Joosung Kim ,  Doil Ku ,  Younggil Gi ,  Yonghee Yang ,  Youngsub Lee

IPC: G06F3/044 ,  H04B1/40

CPC classification number: G06F3/044 ,  G06F2203/04112 ,  H04B1/40

Abstract: According to various embodiments of the disclosure, an electronic device may comprise: a housing including: a first surface, a second surface facing in a direction opposite to the first surface, and a side surface at least partially surrounding a space between the first surface and the second surface; a printed circuit board disposed between the first surface and the second surface; a first sensing element including a plurality of conductive vias arranged in parallel to the side surface in at least a portion of an edge of the printed circuit board; and a grip sensor electrically connected with the first sensing element. The grip sensor may be configured to detect a change in capacitance due to an approach or contact state of an external object to the housing, in at least a portion of the side surface of the housing using the first sensing element.