公开(公告)号：US20240274593A1

公开(公告)日：2024-08-15

申请号：US18414750

申请日：2024-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongmin SON ,  Seokho KIM ,  Sumin PARK ,  Kyuha LEE ,  Joohee JANG

IPC: H01L27/02 ,  H01L23/13 ,  H01L23/58 ,  H01L27/118

CPC classification number: H01L27/0207 ,  H01L23/13 ,  H01L23/585 ,  H01L2027/11875

Abstract: A semiconductor device includes a first substrate structure and a second substrate structure stacked on the first substrate structure. The first substrate structure includes a plurality of first bonding pads in a first die region of a first substrate, a first passivation layer on the first substrate and exposing the first bonding pads, and a plurality of first dummy patterns in the first passivation layer in a first scribe region. The second substrate structure includes a plurality of second bonding pads in a second die region of a second substrate, a second passivation layer on the second substrate and exposing the second bonding pads, and a plurality of second dummy patterns in the second passivation layer in a second scribe region. The first bonding pad and the second bonding pad are directly bonded to each other.

公开(公告)号：US20220208706A1

公开(公告)日：2022-06-30

申请号：US17694035

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohee JANG ,  Seokho KIM ,  Hoonjoo NA ,  Jaehyung PARK ,  Kyuha LEE

IPC: H01L23/00 ,  H01L27/146

Abstract: A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.

公开(公告)号：US20250038141A1

公开(公告)日：2025-01-30

申请号：US18916136

申请日：2024-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohee JANG ,  Seokho KIM ,  Hoonjoo NA ,  Jaehyung PARK ,  Kyuha LEE

IPC: H01L23/00 ,  H01L27/146

Abstract: A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.