公开(公告)号：US20140095556A1

公开(公告)日：2014-04-03

申请号：US14038938

申请日：2013-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Man LEE ,  Cjul LEE ,  Chul LEE ,  Joo-Young HWANG

IPC: G06F17/30

CPC classification number: G06F17/30091

Abstract: A computing system includes a storage device in which file data is stored through data blocks and metadata is stored through a node block, and a file system configured to manage the file data and the metadata stored in the storage device. The node block includes data pointers respectively pointing to the data blocks, and one or more extents each indicative of data block groups which include data blocks having continuous physical addresses among the data blocks

Abstract translation: 计算系统包括：存储装置，其中通过数据块存储文件数据，并且通过节点块存储元数据;以及文件系统，被配置为管理存储在存储装置中的文件数据和元数据。 节点块包括分别指向数据块的数据指针，以及每个指示数据块组的一个或多个扩展区，其包括在数据块中具有连续物理地址的数据块

公开(公告)号：US20220261171A1

公开(公告)日：2022-08-18

申请号：US17737406

申请日：2022-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Geun KIM ,  Jae-Yoon CHOI ,  Joo-Young HWANG

IPC: G06F3/06 ,  G06F12/10 ,  G06F13/16

Abstract: A storage device includes a main storage including a plurality of nonvolatile memory devices, the main storage device configured to store data; and a storage controller configured to control the main storage. The storage controller is configured to, divide a plurality of memory blocks of the plurality of nonvolatile memory devices into a plurality of banks, assign each one of the plurality of banks into one of a) a plurality of sets and b) one free bank, each of the plurality of sets including at least one bank, perform data migration operation to transfer the data among the sets by using the one free bank in response to an input/output (I/O) request from an external host device while securing a specific I/O execution time, and control the data migration operation such that the I/O request is independent of the data migration operation.

公开(公告)号：US20220269602A1

公开(公告)日：2022-08-25

申请号：US17740927

申请日：2022-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Geun KIM ,  In-Hwan DOH ,  Joo-Young HWANG ,  Seung-Uk SHIN ,  Min-Seok KO ,  Jae-Yoon CHOI

IPC: G06F12/02 ,  G06F9/38 ,  G06F12/10

Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.

公开(公告)号：US20190146679A1

公开(公告)日：2019-05-16

申请号：US16110088

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-Hwan DOH ,  Byung-Hei JUN ,  Joo-Young HWANG

IPC: G06F3/06

Abstract: A method of operating a storage device to perform a garbage collection operation on a nonvolatile memory device having a plurality of memory blocks, the storage device configured to operate based on a multi-stream scheme such that a plurality of data is written into the plurality of memory blocks based on which of a plurality of streams is associated with the plurality of data. The method may include selecting at least two memory blocks among the plurality of memory blocks as victim memory blocks such that the victim memory blocks are configured to store data associated with a same stream of the plurality of streams; and performing the garbage collection operation on the victim memory blocks.

公开(公告)号：US20130208537A1

公开(公告)日：2013-08-15

申请号：US13762737

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yang-Woo ROH ,  Chul LEE ,  Sang-Hoan CHANG ,  Jae-Soo LEE ,  Joo-Young HWANG

IPC: G11C13/00

CPC classification number: G11C13/0004 ,  G11C7/14 ,  G11C13/004 ,  G11C13/0061 ,  G11C2013/0078 ,  G11C2213/72

Abstract: A memory device may include a normal cell which is configured to be programmed to a first resistance and stabilized as a resistance of the normal cell drifts from the first resistance to a second resistance; a flag cell which is configured to be programmed to a third resistance smaller than the first resistance and stabilized as a resistance of the flag cell drifts from the third resistance to a fourth resistance smaller than the second resistance; and a decision circuit which is configured to decide whether the flag cell has been stabilized in order to determine whether the normal cell has been stabilized.

Abstract translation: 存储器件可以包括正常单元，其被配置为被编程为第一电阻并且随着正常单元的电阻从第一电阻漂移到第二电阻而稳定; 被配置为被编程为小于所述第一电阻的第三电阻并且随着所述标志单元的电阻从所述第三电阻漂移到小于所述第二电阻的第四电阻而稳定的标志单元; 以及判定电路，其被配置为判定标志单元是否已经稳定以便确定正常单元是否已经稳定。