公开(公告)号：US09537029B2

公开(公告)日：2017-01-03

申请号：US14582294

申请日：2014-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Seok Kim ,  Bongjin Kuh ,  Jongsung Lim ,  Hanmei Choi

IPC: H01L21/02 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/03529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/1804 ,  H01L31/1864 ,  Y02P70/521

Abstract: A semiconductor device includes a first semiconductor layer including a recess region and protrusions defined by the recessed region, first insulating patterns provided on the protrusions and extending to sidewalls of the protrusions, and a second semiconductor layer to fill the recess region and cover the first insulating patterns. The protrusions includes a first group of protrusions spaced apart from each other in a first direction to constitute a row and a second group of protrusions spaced from the first group of protrusions in a second direction intersecting the first direction and spaced from each other in the first direction to constitute a row. The second group of protrusions are shifted from the first group of protrusions in the first direction.

Abstract translation: 半导体器件包括：第一半导体层，包括凹陷区域和由凹陷区域限定的突起;设置在突起上并延伸到突起侧壁的第一绝缘图案;以及第二半导体层，用于填充凹陷区域并覆盖第一绝缘体 模式。 突起包括在第一方向上彼此间隔开的第一组突起，以构成一排，并且在与第一方向相交的第二方向上与第一组突起间隔开的第二组突起在第一方向上彼此间隔开 方向构成一排。 第二组突起在第一方向从第一组突起移位。

公开(公告)号：US09728666B2

公开(公告)日：2017-08-08

申请号：US14141547

申请日：2013-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongjin Kuh ,  Kichul Kim ,  JeongMeung Kim ,  Joonghan Shin ,  Jongsung Lim ,  Hanmei Choi

IPC: H01L31/0248 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03529 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption layer formed on the photon absorption seed layer in the first region. The photon absorption seed layer has a particular structure that may assist in reducing dislocation density in a region that includes a photon absorption layer.