公开(公告)号：US20180012955A1

公开(公告)日：2018-01-11

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/08

CPC classification number: H01L28/90 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/88 ,  H01L28/92

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US10211282B2

公开(公告)日：2019-02-19

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/08

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US10692968B2

公开(公告)日：2020-06-23

申请号：US16697484

申请日：2019-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/08

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US10665664B2

公开(公告)日：2020-05-26

申请号：US15897931

申请日：2018-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Lee ,  Hyongsoo Kim ,  Jongryul Jun

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.

公开(公告)号：US09917147B2

公开(公告)日：2018-03-13

申请号：US15159809

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Lee ,  Hyongsoo Kim ,  Jongryul Jun

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/90 ,  H01L27/10852

Abstract: A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.

公开(公告)号：US11594595B2

公开(公告)日：2023-02-28

申请号：US17156773

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Lee ,  Hyongsoo Kim ,  Jongryul Jun

IPC: H01L27/108 ,  H01L49/02

Abstract: A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.

公开(公告)号：US10903310B2

公开(公告)日：2021-01-26

申请号：US16787426

申请日：2020-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Lee ,  Hyongsoo Kim ,  Jongryul Jun

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.