公开(公告)号：US12133381B2

公开(公告)日：2024-10-29

申请号：US17497200

申请日：2021-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moorym Choi ,  Taemok Gwon ,  Junhyoung Kim ,  Hyunjae Kim ,  Youngbum Woo ,  Jongin Yun

IPC: H10B41/27 ,  G11C5/06 ,  H01L23/538 ,  H01L29/06 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  H01L23/5384 ,  H01L23/5386 ,  H01L29/0649 ,  H10B43/27

Abstract: A semiconductor device includes a first substrate including an impurity region including impurities of a first conductivity type, circuit devices on the first substrate, a lower interconnection structure electrically connected to the circuit devices, a second substrate on the lower interconnection structure and including semiconductor of the first conductivity type, gate electrodes on the second substrate and stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the second substrate, channel structures penetrating the gate electrodes, and a connection structure. The channel structures may extend perpendicular to the second substrate. The channel structures may include a channel layer. The connection structure may connect the impurity region of the first substrate to the second substrate, and the connection structure may include a via including a semiconductor of a second conductivity type.