公开(公告)号：US20230170372A1

公开(公告)日：2023-06-01

申请号：US17952479

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon NOH ,  KOOK TAE KIM ,  JINGYUN KIM ,  MISEON PARK ,  JAEWOONG LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/14627 ,  H01L27/14621 ,  H01L27/14636

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a. plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US20240266376A1

公开(公告)日：2024-08-08

申请号：US18388712

申请日：2023-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon NOH ,  Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a substrate including a plurality of pixel regions, a first surface, and a second surface that is opposite to the first surface, and a deep device isolation pattern penetrating the substrate and between the plurality of pixel regions, the deep device isolation pattern including a first filling pattern adjacent to the second surface, a second filling pattern on the first filling pattern and adjacent to the first surface, a semiconductor pattern between the first filling pattern and the substrate, an oxidized semiconductor pattern on the semiconductor pattern and between the substrate and the second filling pattern, and a side insulating pattern between the semiconductor pattern and the substrate, where the semiconductor pattern directly contacts the oxidized semiconductor pattern.

公开(公告)号：US20240222408A1

公开(公告)日：2024-07-04

申请号：US18512600

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyeon NOH ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603

Abstract: An image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.

公开(公告)号：US20230215892A1

公开(公告)日：2023-07-06

申请号：US18086257

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kooktae KIM ,  Jingyun KIM ,  Jonghyeon NOH ,  Miseon PARK ,  Jaewoong LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  G02B5/201

Abstract: An image sensor includes a pixel division structure, a light sensing element, a color filter array layer and a microlens. The pixel division structure extends through a substrate in a vertical direction, and defines unit pixel regions. The light sensing element is in each unit pixel region. The color filter array layer including color filters is on the substrate. The microlens is on the color filter array layer. The pixel division structure includes a core and a lateral pattern structure on a sidewall thereof. The core includes a first filling pattern including polysilicon doped with impurities at a first concentration and a second filling pattern in a space formed by the first filling pattern. A sidewall of the second filling pattern is covered by the first filling pattern, and the second filling pattern includes polysilicon doped with impurities at a second concentration different from the first concentration.