公开(公告)号：US20240204025A1

公开(公告)日：2024-06-20

申请号：US18526404

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeongtaek BAE ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14683

Abstract: Provided is an image sensor including a substrate including a first photoelectric conversion region, and an isolation region arranged in the substrate vertically from the first surface and defining the first photoelectric conversion region, wherein the isolation region includes a first semiconductor pattern conformally covering an inner wall of a trench, an insulating film conformally covering an inner wall of the first semiconductor pattern, a second semiconductor pattern conformally covering an inner wall of a lower portion of the insulating film, and a conductive pattern covering an inner wall of an upper portion of the insulating film and an uppermost surface and an inner wall of the second semiconductor pattern, wherein a vertical distance from the first surface to the uppermost surface of the first semiconductor pattern is substantially the same as a vertical distance from the first surface to the uppermost surface of the conductive pattern.

公开(公告)号：US20240170521A1

公开(公告)日：2024-05-23

申请号：US18237168

申请日：2023-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Jungim CHOE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14632

Abstract: An image sensor comprising a substrate including a plurality of unit pixels and including a first surface facing a first direction and a second surface facing a second direction opposite to the first direction, and a pixel isolation structure passing through the substrate in the second direction between the unit pixels, wherein the pixel isolation structure includes a buried conductive pattern extending from the second surface of the substrate into an inside of the substrate, and an insulating structure covering a lower surface of the buried conductive pattern and extending between the substrate and the buried conductive pattern, a first level and a second level that is under the first level being defined, the lower surface of the buried conductive pattern being positioned at the second level.

公开(公告)号：US20240072089A1

公开(公告)日：2024-02-29

申请号：US18310194

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Seunghwi YOO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor may include a substrate having a first surface and a second surface, which are opposite to each other, and micro lenses on the second surface, interconnection lines on the first surface, and a pixel isolation portion in the substrate, the pixel isolation portion configured to isolate pixels from direct contact with each other. The pixel isolation portion may include an insulating isolation pattern and a conductive pattern, wherein the conductive pattern is spaced apart from the substrate, and the insulating isolation pattern is between the substrate and the conductive pattern. The conductive pattern may include a sequential arrangement of a first conductive pattern, a second conductive pattern, and a third conductive pattern on a side surface of the insulating isolation pattern.

公开(公告)号：US20250169215A1

公开(公告)日：2025-05-22

申请号：US18746308

申请日：2024-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Seunghwi YOO ,  Jingyun KIM

IPC: H01L27/146

Abstract: Disclosed are image sensors and their fabrication methods. The image sensor comprises a semiconductor substrate having a first conductivity type and including a first surface and a second surface opposite to each other, a plurality of photoelectric conversion regions in the semiconductor substrate and having a second conductivity type, and a first pixel isolation structure between the photoelectric conversion regions that are adjacent to each other in a first direction. The first pixel isolation structure includes a first conductive pattern adjacent to the semiconductor substrate and having a shape that extends from the first surface to the second surface, an inner dielectric pattern on an inner lateral surface of the first conductive pattern, a buried dielectric pattern on the inner dielectric pattern, and an etch stop layer between the inner dielectric pattern and the buried dielectric pattern.

公开(公告)号：US20250006763A1

公开(公告)日：2025-01-02

申请号：US18441681

申请日：2024-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Minkyung LEE

IPC: H01L27/146

Abstract: An image sensor includes a substrate that includes a first surface and a second surface that are opposite to each other, where the substrate includes a plurality of pixel areas; an isolation pattern that extends from the first surface and into the substrate, where the isolation pattern is between the plurality of pixel areas; and an antireflection layer on the isolation pattern, where the isolation pattern includes: a first device isolation pattern that contacts the antireflection layer; and a second device isolation pattern that is spaced apart from the antireflection layer, where the first device isolation pattern includes: a first dielectric layer; and a conductive reflection layer on the first dielectric layer, and where a top surface of the conductive reflection layer and a top surface of the first dielectric layer extend from the second surface of the substrate by a same distance.

公开(公告)号：US20240030263A1

公开(公告)日：2024-01-25

申请号：US18183583

申请日：2023-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Seunghwi YOO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14623 ,  H01L27/14621

Abstract: An image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. The pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. The isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. The isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. The second thickness is different from the first thickness.

公开(公告)号：US20240266376A1

公开(公告)日：2024-08-08

申请号：US18388712

申请日：2023-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon NOH ,  Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a substrate including a plurality of pixel regions, a first surface, and a second surface that is opposite to the first surface, and a deep device isolation pattern penetrating the substrate and between the plurality of pixel regions, the deep device isolation pattern including a first filling pattern adjacent to the second surface, a second filling pattern on the first filling pattern and adjacent to the first surface, a semiconductor pattern between the first filling pattern and the substrate, an oxidized semiconductor pattern on the semiconductor pattern and between the substrate and the second filling pattern, and a side insulating pattern between the semiconductor pattern and the substrate, where the semiconductor pattern directly contacts the oxidized semiconductor pattern.

公开(公告)号：US20240222408A1

公开(公告)日：2024-07-04

申请号：US18512600

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyeon NOH ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603

Abstract: An image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.

公开(公告)号：US20240145513A1

公开(公告)日：2024-05-02

申请号：US18446752

申请日：2023-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Seunghwi YOO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface, and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including first to fourth pixels in a clockwise direction, the pixel separation part including a first part between the first and second pixels, and a second part between the first pixel and the third pixel. Each of the first part and the second part includes a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern. The second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern. The second silicon pattern has a rhombic shape in a plan view.

公开(公告)号：US20230215892A1

公开(公告)日：2023-07-06

申请号：US18086257

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kooktae KIM ,  Jingyun KIM ,  Jonghyeon NOH ,  Miseon PARK ,  Jaewoong LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  G02B5/201

Abstract: An image sensor includes a pixel division structure, a light sensing element, a color filter array layer and a microlens. The pixel division structure extends through a substrate in a vertical direction, and defines unit pixel regions. The light sensing element is in each unit pixel region. The color filter array layer including color filters is on the substrate. The microlens is on the color filter array layer. The pixel division structure includes a core and a lateral pattern structure on a sidewall thereof. The core includes a first filling pattern including polysilicon doped with impurities at a first concentration and a second filling pattern in a space formed by the first filling pattern. A sidewall of the second filling pattern is covered by the first filling pattern, and the second filling pattern includes polysilicon doped with impurities at a second concentration different from the first concentration.