公开(公告)号：US20230085469A1

公开(公告)日：2023-03-16

申请号：US17828329

申请日：2022-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Min YANG ,  Byung Jae KANG ,  Jong Keum LEE ,  Hee Sung LEE

IPC: H01L29/78 ,  H01L27/108 ,  H01L29/08

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, device isolation films defining an active region in the substrate, the active region defined in the substrate by the device isolation films, a gate pattern formed in the active region, and source/drain regions on both sides of the gate pattern, in the active region, the source/drain regions include first parts, which are doped with carbon monoxide (CO) ions and are recrystallized.