公开(公告)号：US20230085469A1

公开(公告)日：2023-03-16

申请号：US17828329

申请日：2022-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Min YANG ,  Byung Jae KANG ,  Jong Keum LEE ,  Hee Sung LEE

IPC: H01L29/78 ,  H01L27/108 ,  H01L29/08

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, device isolation films defining an active region in the substrate, the active region defined in the substrate by the device isolation films, a gate pattern formed in the active region, and source/drain regions on both sides of the gate pattern, in the active region, the source/drain regions include first parts, which are doped with carbon monoxide (CO) ions and are recrystallized.

公开(公告)号：US20240379406A1

公开(公告)日：2024-11-14

申请号：US18394940

申请日：2023-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Sung LEE ,  Tae Sung KANG ,  Se Min YANG ,  Kyo-Suk CHAE ,  Seung Ho HONG ,  Beom Yong HWANG

IPC: H01L21/762 ,  H01L29/423 ,  H10B12/00

Abstract: A semiconductor device is disclosed. The semiconductor memory device comprises a substrate including an active region, an element isolation film disposed in the substrate and that defines the active region, a recess which is disposed in the active region and extends in a first direction, and a gate structure extending in a second direction, on the active region, wherein the gate structure includes a gate insulating film, a gate stack pattern, and a gate capping pattern which are sequentially stacked, wherein the gate insulating film extends along an upper face of the active region, and a part of the gate insulating film fills the recess, and wherein a height from a lower face of the substrate to a bottom face of the element isolation film is less than a height from the lower face of the substrate to a bottom face of the recess.