公开(公告)号：US10388563B2

公开(公告)日：2019-08-20

申请号：US15668029

申请日：2017-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rak Hwan Kim ,  Byung Hee Kim ,  Sang Bom Kang ,  Jong Jin Lee ,  Eun Ji Jung

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485

Abstract: A semiconductor device includes a lower layer, an upper layer on the lower layer, a contact between the lower layer and the upper layer, the contact electrically connects the lower layer and the upper layer, a capping pattern wrapping around the contact and covering an upper surface of the contact, a barrier layer wrapping around the capping pattern and covering a lower surface of the capping pattern and a lower surface of the contact, and an interlayer insulating layer between the lower layer and the upper layer, the interlayer insulating layer wrapping around the barrier layer and exposing an upper surface of the capping pattern, wherein the capping pattern includes a material having an etching selectivity with respect to an oxide.

公开(公告)号：US09735652B2

公开(公告)日：2017-08-15

申请号：US14686230

申请日：2015-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Jin Lee ,  Woon yong Lee ,  Myong Gui Choi

IPC: D06F37/30 ,  H02K9/02 ,  H02K1/32 ,  H02K3/52 ,  D06F37/20 ,  H02K9/04 ,  H02K21/22

CPC classification number: H02K9/02 ,  D06F37/206 ,  H02K1/32 ,  H02K3/522 ,  H02K9/04 ,  H02K21/22

Abstract: A washing machine includes a tub; a drum arranged in the tub; and a motor mounted on the rear wall, the motor including a stator and a rotor. The stator includes a stator core, a first insulator and a second insulator. The rotor includes a rotor frame including a bottom, air inlets formed at the bottom, and a side wall extended from the bottom. The first insulator is disposed between the stator core and the bottom of the rotor frame, the first insulator including at least one heat dissipation hole. The second insulator is disposed between the stator core and the rear wall of the tub, the second insulator including at least one guide member to position the second insulator on the rear wall of the tub. The guide member is exposed through the dissipation hole when the stator is coupled to the rear wall of the tub.

公开(公告)号：US20230170252A1

公开(公告)日：2023-06-01

申请号：US17933216

申请日：2022-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Jin Lee ,  Seung Yong Yoo ,  Eun-Ji Jung

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/49

CPC classification number: H01L21/76811 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266 ,  H01L29/4983

Abstract: The present disclosure provides a semiconductor device capable of improving element performance and reliability. The semiconductor device comprises a lower wiring structure, an upper interlayer insulating layer disposed on the lower wiring structure and including an upper wiring trench, the upper wiring trench exposing a portion of the lower wiring structure, and an upper wiring structure including an upper liner and an upper filling layer on the upper liner in the upper wiring trench, wherein the upper liner includes a sidewall portion extending along a sidewall of the upper wiring trench and a bottom portion extending along a bottom surface of the upper wiring trench, the sidewall portion of the upper liner includes cobalt (Co) and ruthenium (Ru), and the bottom portion of the upper liner is formed of cobalt (Co).

公开(公告)号：US20210090999A1

公开(公告)日：2021-03-25

申请号：US16892649

申请日：2020-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong YOO ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

公开(公告)号：US11942427B2

公开(公告)日：2024-03-26

申请号：US17947282

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong Yoo ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/522 ,  H01L21/285 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/28568 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53257

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

公开(公告)号：US20230020234A1

公开(公告)日：2023-01-19

申请号：US17947282

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong YOO ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

公开(公告)号：US11450607B2

公开(公告)日：2022-09-20

申请号：US16892649

申请日：2020-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong Yoo ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.