公开(公告)号：US20160233310A1

公开(公告)日：2016-08-11

申请号：US14970710

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Young Lee ,  Dohyoung KIM ,  Johnsoo KIM ,  Heungsik PARK ,  Hongsik SHIN ,  Younghun CHOI

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/6656 ,  H01L29/401 ,  H01L29/4232 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.

Abstract translation: 形成半导体器件的方法包括在衬底上形成栅电极，在栅电极的侧壁上形成第一间隔物，在第一间隔物上形成第二间隔物，并在栅电极的顶表面上形成封盖图案， 第一间隔物和第二间隔物。 第二间隔件的外侧壁与封盖图案的侧壁垂直对齐。

公开(公告)号：US20160204030A1

公开(公告)日：2016-07-14

申请号：US14955374

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： KeunHee BAI ,  Dohyoung KIM ,  Johnsoo KIM ,  Heungsik PARK ,  Doo-Young LEE ,  Sanghyun LEE

IPC: H01L21/768 ,  H01L21/3065 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/76897 ,  H01L21/823431 ,  H01L21/823475 ,  H01L29/517 ,  H01L29/66545

Abstract: A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.

Abstract translation: 形成牺牲层以覆盖栅极结构。 牺牲层被图案化以在牺牲层中形成第一开口。 在第一开口中形成初步接触，并且选择性地去除牺牲层。 形成绝缘层以覆盖栅极结构并露出初步接触。 去除预接触以在绝缘层中形成第二开口，然后在第二开口中形成接触。