公开(公告)号：US20230422488A1

公开(公告)日：2023-12-28

申请号：US18192329

申请日：2023-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin KIM ,  Sohyun Park ,  Chansic Yoon ,  Dongmin Choi ,  Seungbo Ko ,  Hyosub Kim ,  Jingkuk Bae ,  Woojin Jeong ,  Eunkyung Cha ,  Junhyeok Ahn

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/0335 ,  H10B12/482 ,  H10B12/315

Abstract: A semiconductor device including a first contact plug structure on a substrate, a lower spacer structure on a sidewall of the first contact plug structure, and a bit line structure on the first contact plug structure and including a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate may be provided. The first contact plug structure may include a conductive pad contacting the upper surface of the substrate, an ohmic contact pattern on the conductive pad, and a conductive filling pattern on the ohmic contact pattern. The conductive filling pattern may include metal, and include a lower portion having a relatively large width and an upper portion having a relatively small width. The lower spacer structure may contact a sidewall of the conductive filling pattern.