公开(公告)号：US10886167B2

公开(公告)日：2021-01-05

申请号：US16258815

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hwan Chun ,  Hui-jung Kim ,  Keun-nam Kim ,  Sung-hee Han ,  Yoo-sang Hwang

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/764 ,  H01L29/06 ,  H01L27/108

Abstract: A semiconductor device includes: a substrate having active regions defined by a device isolation region; a conductive line extending in a direction on the active regions; insulating liners on both sidewalls of a lower portion of the conductive line that contacts with the active regions; spacers that are apart from the insulating liners in a direction perpendicular to a surface of the substrate and sequentially formed on both sidewalls of an upper portion of the conductive line; a blocking layer arranged at a spacing between a spacer located in the middle of the spacers and the insulating liners and in a recess portion recessed from one end of the spacer located in the middle of the spacers toward the conductive line; and conductive patterns arranged on the active regions on both sides of the spacers.

公开(公告)号：US20200035541A1

公开(公告)日：2020-01-30

申请号：US16258815

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hwan Chun ,  Hui-jung KIM ,  Keun-nam KIM ,  Sung-hee HAN ,  Yoo-sang HWANG

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/764 ,  H01L29/06 ,  H01L27/108

Abstract: A semiconductor device includes: a substrate having active regions defined by a device isolation region; a conductive line extending in a direction on the active regions; insulating liners on both sidewalls of a lower portion of the conductive line that contacts with the active regions; spacers that are apart from the insulating liners in a direction perpendicular to a surface of the substrate and sequentially formed on both sidewalls of an upper portion of the conductive line; a blocking layer arranged at a spacing between a spacer located in the middle of the spacers and the insulating liners and in a recess portion recessed from one end of the spacer located in the middle of the spacers toward the conductive line; and conductive patterns arranged on the active regions on both sides of the spacers.