公开(公告)号：US11557582B2

公开(公告)日：2023-01-17

申请号：US16837101

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim Kim ,  Myung Soo Noh ,  No Young Chung ,  Seok Yun Jeong ,  Young Han Kim

IPC: H01L27/02 ,  H01L27/092 ,  G06F30/392 ,  H01L27/11 ,  G06F117/12

Abstract: A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.

公开(公告)号：US12170278B2

公开(公告)日：2024-12-17

申请号：US18080832

申请日：2022-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim Kim ,  Myung Soo Noh ,  No Young Chung ,  Seok Yun Jeong ,  Young Han Kim

IPC: H01L27/02 ,  G06F30/392 ,  H01L27/092 ,  H10B10/00 ,  G06F117/12

Abstract: A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.

公开(公告)号：US10409169B2

公开(公告)日：2019-09-10

申请号：US15481204

申请日：2017-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim Kim ,  Jong-Doo Kim ,  Joong-Won Jeon

IPC: H01L21/31 ,  G03F7/20 ,  G03F1/26 ,  H01L21/8234 ,  H01L21/66 ,  H01L29/66 ,  G03F1/36 ,  G03F1/44 ,  G03F1/84

Abstract: Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.