公开(公告)号：US10797143B2

公开(公告)日：2020-10-06

申请号：US15914113

申请日：2018-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Lee ,  Jeong Gil Lee ,  Do Hyung Kim ,  Ki Hyun Yoon ,  Hyun Seok Lim

IPC: H01L29/423 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/49 ,  H01L21/28 ,  G11C16/08 ,  G11C16/04

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a plurality of gate electrodes that are stacked on a substrate and are spaced apart from each other in a vertical direction and a channel region extending through the plurality of gate electrodes in the vertical direction. Each of the plurality of gate electrodes may include a first conductive layer defining a recess recessed toward the channel region, and a second conductive layer in the recess defined by the first conductive layer. A first concentration of impurities in the second conductive layer may be higher than a second concentration of the impurities in the first conductive layer, and the impurities may include nitrogen (N).

公开(公告)号：US10680008B2

公开(公告)日：2020-06-09

申请号：US16000984

申请日：2018-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Lee ,  Jeong Gil Lee ,  Do Hyung Kim ,  Sung Nam Lyu ,  Hyun Seok Lim

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/28

Abstract: A method of manufacturing a semiconductor device includes alternately stacking sacrificial layers and interlayer insulating layers on a substrate, to form a stack structure; forming channels penetrating through the stack structure; forming separation regions penetrating through the stack structure; forming lateral openings by removing the sacrificial layers through the separation regions; and forming gate electrodes in the lateral openings. Forming the gate electrodes may include forming a nucleation layer in the lateral openings by supplying a source gas and a first reaction gas, and forming a bulk layer on the nucleation layer to fill the lateral openings by supplying the source gas and a second reaction gas, different from the first reaction gas. The first reaction gas may be supplied from a first reaction gas source, stored in a gas charging unit, and supplied from the gas charging unit.

公开(公告)号：US20190067429A1

公开(公告)日：2019-02-28

申请号：US15914113

申请日：2018-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Lee ,  Jeong Gil Lee ,  Do Hyung Kim ,  Ki Hyun Yoon ,  Hyun Seok Lim

IPC: H01L29/423 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/49 ,  H01L21/28

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a plurality of gate electrodes that are stacked on a substrate and are spaced apart from each other in a vertical direction and a channel region extending through the plurality of gate electrodes in the vertical direction. Each of the plurality of gate electrodes may include a first conductive layer defining a recess recessed toward the channel region, and a second conductive layer in the recess defined by the first conductive layer. A first concentration of impurities in the second conductive layer may be higher than a second concentration of the impurities in the first conductive layer, and the impurities may include nitrogen (N).