公开(公告)号：US20150325490A1

公开(公告)日：2015-11-12

申请号：US14709775

申请日：2015-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Uihyoung LEE ,  Donghyun LEE ,  Jinhyoung KIM ,  Jaihyung WON ,  Sanghyun LEE ,  Jinho CHOI

IPC: H01L21/66 ,  H01L21/288 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/306 ,  C25D17/001 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/30604 ,  H01L21/3063 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/76898 ,  H01L22/26

Abstract: Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

Abstract translation: 提供了一种处理衬底的装置和方法。 基板处理装置包括：基板处理单元，其使用包含第一和第二源的混合物的处理溶液来处理基板; 源提供部件，用于将第一和第二源提供给基板处理单元; 至少一个分析器，用于测量处理溶液中第二源的浓度或处理溶液的pH值，并使用标准溶液调整处理溶液中第二源的测量参考值，其中第一和第二源 混合以具有预定浓度或pH值; 以及标准溶液供​​应部分，以使用从源供应部分供应的第一和第二源来准备标准溶液，并将标准溶液提供给至少一个分析器。

公开(公告)号：US20160194756A1

公开(公告)日：2016-07-07

申请号：US14972598

申请日：2015-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek LIM ,  Jeonghoon NAM ,  Chul PARK ,  Youngchae SEO ,  Jaihyung WON ,  Seungmoo LEE ,  Donghoon HAN

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45512 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591

Abstract: A semiconductor processing apparatus includes a susceptor supporting a processing target, a gas box spaced apart from the susceptor, the gas box including a concave region facing an upper surface of the processing target, and an inclined surface at an outer side of the concave region, an inclination angle of the inclined surface of the gas box relative to an upper surface of the susceptor is more than 10° and less than 35°, and a shower head within the concave region of the gas box.

Abstract translation: 一种半导体处理装置，包括支撑处理对象的基座，与基座间隔开的气箱，包括面对加工对象的上表面的凹部的气体盒和凹部的外侧的倾斜面， 气箱的倾斜面相对于基座的上表面的倾斜角度大于10°且小于35°，以及在气箱的凹入区域内的喷头。

公开(公告)号：US20150130027A1

公开(公告)日：2015-05-14

申请号：US14538100

申请日：2014-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se jun PARK ,  Ho jun KIM ,  Jaihyung WON ,  Gyuwan CHOI ,  Dohyung KIM

IPC: H01L21/308 ,  H01L21/311 ,  H01L29/06 ,  H01L21/033

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02118 ,  H01L21/02274

Abstract: A method of forming a carbon-containing thin film and a method of manufacturing a semiconductor device using the method of forming the carbon-containing thin film are described. The method of forming a carbon-containing thin film includes the steps of introducing a substrate into a chamber, injecting hydrocarbon gas and at least nitrogen gas simultaneously into the chamber, and depositing a carbon-containing thin film including carbon and nitrogen on the substrate, thereby forming a carbon-containing thin film having high selectivity and uniform thickness.

Abstract translation: 描述了形成含碳薄膜的方法和使用形成含碳薄膜的方法制造半导体器件的方法。 形成含碳薄膜的方法包括以下步骤：将基材引入室中，同时将烃气体和至少氮气注入到室中，以及在基板上沉积包含碳和氮的含碳薄膜， 从而形成具有高选择性和均匀厚度的含碳薄膜。