公开(公告)号：US20170110291A1

公开(公告)日：2017-04-20

申请号：US15204038

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hwa KIM ,  Byungbok KANG ,  Chanhoon PARK ,  Jaehyun LEE ,  SungHyup KIM ,  Jaeick HONG

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32844 ,  H01J37/3299 ,  H01J2237/006 ,  Y02C20/30

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.