公开(公告)号：US09165966B2

公开(公告)日：2015-10-20

申请号：US14268230

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung Shin ,  Minseok Oh ,  Sungsoo Choi ,  Hyoungsoo Ko ,  Taechan Kim

IPC: H01L27/146 ,  H01L27/105 ,  H01L31/0232

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

Abstract translation: 提供CMOS图像传感器。 CMOS图像传感器可以包括包括光接收区域和与光接收区域相邻的逻辑区域的半导体衬底。 CMOS图像传感器可以包括光接收区域中的光电转换区域。 此外，CMOS图像传感器可以包括包括与光电转换区域的侧壁的界面的隔离区域。 隔离区域可以包括小于半导体衬底的第二折射率的第一折射率，并且隔离区域可以在光电转换区域的逻辑区域和侧壁之间。

公开(公告)号：US20140361355A1

公开(公告)日：2014-12-11

申请号：US14268230

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung Shin ,  Minseok Oh ,  Sungsoo Choi ,  Hyoungsoo Ko ,  Taechan Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

Abstract translation: 提供CMOS图像传感器。 CMOS图像传感器可以包括包括光接收区域和与光接收区域相邻的逻辑区域的半导体衬底。 CMOS图像传感器可以包括光接收区域中的光电转换区域。 此外，CMOS图像传感器可以包括包括与光电转换区域的侧壁的界面的隔离区域。 隔离区域可以包括小于半导体衬底的第二折射率的第一折射率，并且隔离区域可以在光电转换区域的逻辑区域和侧壁之间。