公开(公告)号：US20140252420A1

公开(公告)日：2014-09-11

申请号：US14138434

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinwook Yi ,  Hyoungsoo Ko ,  Kyungho Lee ,  Youngwoo Jung ,  Heegeun Jeong

IPC: H01L27/148

CPC classification number: H01L27/14605 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor device can include device isolation regions in a substrate and a photoelectric conversion portion in the substrate that can be between the device isolation regions. A transfer gate of the image sensor device, can be located over, and be electrically coupled to, the photoelectric conversion portion. The transfer gate can include at least two protrusions, that are separated from the device isolation regions, and that protrude toward the photoelectric conversion portion.

Abstract translation: 图像传感器装置可以包括衬底中的器件隔离区域和衬底中可位于器件隔离区域之间的光电转换部分。 图像传感器装置的传输门可以位于光电转换部分的上方并与之电耦合。 传输门可以包括与器件隔离区分离的至少两个突起，并且朝向光电转换部分突出。

公开(公告)号：US09165966B2

公开(公告)日：2015-10-20

申请号：US14268230

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung Shin ,  Minseok Oh ,  Sungsoo Choi ,  Hyoungsoo Ko ,  Taechan Kim

IPC: H01L27/146 ,  H01L27/105 ,  H01L31/0232

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

Abstract translation: 提供CMOS图像传感器。 CMOS图像传感器可以包括包括光接收区域和与光接收区域相邻的逻辑区域的半导体衬底。 CMOS图像传感器可以包括光接收区域中的光电转换区域。 此外，CMOS图像传感器可以包括包括与光电转换区域的侧壁的界面的隔离区域。 隔离区域可以包括小于半导体衬底的第二折射率的第一折射率，并且隔离区域可以在光电转换区域的逻辑区域和侧壁之间。

公开(公告)号：US20140361355A1

公开(公告)日：2014-12-11

申请号：US14268230

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung Shin ,  Minseok Oh ,  Sungsoo Choi ,  Hyoungsoo Ko ,  Taechan Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

Abstract translation: 提供CMOS图像传感器。 CMOS图像传感器可以包括包括光接收区域和与光接收区域相邻的逻辑区域的半导体衬底。 CMOS图像传感器可以包括光接收区域中的光电转换区域。 此外，CMOS图像传感器可以包括包括与光电转换区域的侧壁的界面的隔离区域。 隔离区域可以包括小于半导体衬底的第二折射率的第一折射率，并且隔离区域可以在光电转换区域的逻辑区域和侧壁之间。