公开(公告)号：US10580617B2

公开(公告)日：2020-03-03

申请号：US15841230

申请日：2017-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kijong Park ,  Jun-Youl Yang ,  Yongsun Ko ,  Kyunghyun Kim ,  Taeheon Kim ,  Jae Jin Shin

IPC: H01J37/32

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

公开(公告)号：US20170207066A1

公开(公告)日：2017-07-20

申请号：US15133989

申请日：2016-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kijong PARK ,  Jun-Youl Yang ,  Yongsun Ko ,  Kyunghyun Kim ,  Taeheon Kim ,  Jae Jin Shin

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32449 ,  H01J37/32899 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

公开(公告)号：US10096453B2

公开(公告)日：2018-10-09

申请号：US15133989

申请日：2016-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kijong Park ,  Jun-Youl Yang ,  Yongsun Ko ,  Kyunghyun Kim ,  Taeheon Kim ,  Jae Jin Shin

IPC: H01J37/32

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

公开(公告)号：US20180102235A1

公开(公告)日：2018-04-12

申请号：US15841230

申请日：2017-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kijong Park ,  Jun-Youl Yang ,  Yongsun Ko ,  Kyunghyun Kim ,  Taeheon Kim ,  Jae Jin Shin

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32449 ,  H01J37/32899 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.