公开(公告)号：US12238931B2

公开(公告)日：2025-02-25

申请号：US17387868

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hwa Seo ,  Hakseon Kim ,  Sungkweon Baek

IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A semiconductor device and an electronic system including the same are disclosed. The semiconductor device may include a gate electrode on a semiconductor substrate, a gate insulating layer between the gate electrode and the semiconductor substrate, a first epitaxial layer disposed on the semiconductor substrate and at a side of the gate electrode, a second epitaxial layer disposed on the semiconductor substrate and at an opposite side of the gate electrode, a first contact plug in contact with a portion of the first epitaxial layer, and a second contact plug in contact with a portion of the second epitaxial layer. Top surfaces of the first and second epitaxial layers may be located at a level higher than a top surface of the gate electrode.

公开(公告)号：US20220059558A1

公开(公告)日：2022-02-24

申请号：US17210861

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Seon Kim ,  Byung Joo Go ,  Sung Kweon Baek ,  Jae Hwa Seo ,  Chang Heon Lee

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  H01L29/06

Abstract: A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.

公开(公告)号：US20240306384A1

公开(公告)日：2024-09-12

申请号：US18664547

申请日：2024-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Seon Kim ,  Byung Joo Go ,  Sung Kweon Baek ,  Jae Hwa Seo ,  Chang Heon Lee

IPC: H10B41/27 ,  G11C5/06 ,  H01L29/06 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  H01L29/0653 ,  H10B43/27

Abstract: A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.

公开(公告)号：US12016177B2

公开(公告)日：2024-06-18

申请号：US17210861

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Seon Kim ,  Byung Joo Go ,  Sung Kweon Baek ,  Jae Hwa Seo ,  Chang Heon Lee

IPC: H10B41/27 ,  G11C5/06 ,  H01L29/06 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  H01L29/0653 ,  H10B43/27

Abstract: A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.