公开(公告)号：US20170018552A1

公开(公告)日：2017-01-19

申请号：US15191581

申请日：2016-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： DAEHYUN MOON ,  HyeoungWON SEO ,  Ilgweon KIM ,  JOOYOUNG LEE ,  DONGJIN JUNG

IPC: H01L27/108 ,  H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02238 ,  H01L21/0228 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76232 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10897 ,  H01L29/0649

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of recess regions on an upper surface of a substrate, forming a first oxide layer in the recess regions, forming a polysilicon layer on the first oxide layer, forming a second oxide layer by oxidizing the polysilicon layer, and forming a gap-fill layer on the second oxide layer to fill the recess regions, wherein at least a portion of the polysilicon layer remains between the first oxide layer and the second oxide layer after forming the second oxide layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底的上表面上形成多个凹陷区域，在凹陷区域中形成第一氧化物层，在第一氧化物层上形成多晶硅层，通过氧化第 并且在第二氧化物层上形成间隙填充层以填充凹陷区域，其中在形成第二氧化物层之后，多晶硅层的至少一部分保留在第一氧化物层和第二氧化物层之间。