公开(公告)号：US20250151280A1

公开(公告)日：2025-05-08

申请号：US18918694

申请日：2024-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suseong NOH ,  Kwangsoo KIM ,  Taeyoung KIM ,  Ilho MYEONG ,  Sanghyun PARK ,  Suhwan LIM

IPC: H10B43/40 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device including a peripheral circuit structure, a cell structure including gate electrodes and stacked on the peripheral circuit structure, the cell structure including a cell region, a connection region, and a peripheral circuit connection region, the cell structure, a plurality of channel structures extending in a vertical direction through the gate electrodes in the cell region, each of the plurality of channel structures including a first end portion close to the peripheral circuit structure and a second end portion opposite to the first end portion, and a common source layer connected to the second end portion of each of the channel structures in the cell region may be provided.