公开(公告)号：US10950541B2

公开(公告)日：2021-03-16

申请号：US16441042

申请日：2019-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon Gyu Hwang ,  Kyoung Woo Lee ,  YoungWoo Cho ,  Il Sup Kim ,  Su Hyun Bark ,  Young-Ju Park ,  Jong Min Baek ,  Min Huh

IPC: H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.

公开(公告)号：US20240203872A1

公开(公告)日：2024-06-20

申请号：US18590793

申请日：2024-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun Lim ,  Wookyung You ,  Kyoungwoo Lee ,  Juyoung Jung ,  Il Sup Kim ,  Chin Kim ,  Kyoungpil Park ,  Jinhyung Park

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06

CPC classification number: H01L23/5228 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L27/0688

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer, and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

公开(公告)号：US11948883B2

公开(公告)日：2024-04-02

申请号：US17221191

申请日：2021-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun Lim ,  Wookyung You ,  Kyoungwoo Lee ,  Juyoung Jung ,  Il Sup Kim ,  Chin Kim ,  Kyoungpil Park ,  Jinhyung Park

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L27/0688

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.