公开(公告)号：US11442522B2

公开(公告)日：2022-09-13

申请号：US16823483

申请日：2020-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyu Kim ,  Jonglae Park ,  Hyunju Kang ,  Jungwook Kim

IPC: G06F1/3203 ,  H01L27/112 ,  G06F1/12 ,  G06F1/3296 ,  G06F1/324

Abstract: There is provided a method of controlling performance boosting of a semiconductor device. According to the method, input of a user is monitored. A performance of the semiconductor device is boosted by consecutively executing a plurality of boosting policies associated with a plurality of macros based on an input event associated with the input of the user and available energy during a boosting interval. Boosting level in each of the boosting policies may be adaptively determined based on the boosting level and the amount of usage of the semiconductor device used in the previous boosting policy and the boosting policies are consecutively executed. Accordingly, improved and/or optimal performance boosting can be provided to the semiconductor device and at the same time, a waste of power can be mitigated and/or prevented.