公开(公告)号：US20230393484A1

公开(公告)日：2023-12-07

申请号：US18088364

申请日：2022-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoduk CHO ,  Seongbo Shim ,  Hyungjong Bae ,  Chan Hwang

IPC: G03F7/20

CPC classification number: G03F7/702

Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.

公开(公告)号：US11960212B2

公开(公告)日：2024-04-16

申请号：US18088364

申请日：2022-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoduk Cho ,  Seongbo Shim ,  Hyungjong Bae ,  Chan Hwang

IPC: G03F7/00

CPC classification number: G03F7/702 ,  G03F7/70116 ,  G03F7/70504

Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.

公开(公告)号：US20240027890A1

公开(公告)日：2024-01-25

申请号：US18180210

申请日：2023-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong Bae ,  Hyun Jung Hwang ,  Heebom Kim ,  Seong-Bo Shim ,  Seungyoon Lee ,  Woo-Yong Jung ,  Chan Hwang

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

Abstract: A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.