公开(公告)号：US20240027890A1

公开(公告)日：2024-01-25

申请号：US18180210

申请日：2023-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong Bae ,  Hyun Jung Hwang ,  Heebom Kim ,  Seong-Bo Shim ,  Seungyoon Lee ,  Woo-Yong Jung ,  Chan Hwang

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/54 ,  G03F1/80

Abstract: A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.

公开(公告)号：US11086210B2

公开(公告)日：2021-08-10

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon Kim ,  Sangjin Kim ,  Heeyoung Go ,  Heebom Kim ,  Hoon Kim ,  Hong-Seock Choi ,  Jinseok Heo

IPC: G03F1/24

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.

公开(公告)号：US11409193B2

公开(公告)日：2022-08-09

申请号：US17028049

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mankyu Kang ,  Hoon Kim ,  Jongkeun Oh ,  Minho Kim ,  Heebom Kim

IPC: G03F1/24 ,  G03F1/22

Abstract: A reticle for an apparatus for EUV exposure and a method of manufacturing a reticle, the reticle including a substrate including an edge region and a main region; a multi-layer structure on the main region and the edge region, a sidewall of the multi-layer structure overlying the edge region; a capping layer covering an upper surface and the sidewall of the multi-layer structure and at least a portion of the edge region of the substrate; and an absorber layer on the capping layer, the absorber layer covering an entire upper surface of the capping layer on the edge region of the substrate, wherein a stacked structure of the capping layer and the absorber layer is on an upper surface of the edge region of the substrate, and a sidewall of the stacked structure of the capping layer and the absorber layer is perpendicular to an upper surface of the substrate.

公开(公告)号：US20190243234A1

公开(公告)日：2019-08-08

申请号：US16125864

申请日：2018-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongseung MOON ,  Heebom Kim ,  Changyoung Jeong

IPC: G03F1/62 ,  G03F1/22

CPC classification number: G03F1/62 ,  G03F1/22

Abstract: Provided is a pellicle to be used in a photolithography process. The pellicle a film, at least a portion of which includes carbon allotropes. The film has a first surface and a second surface facing the first surface, the film comprises a doped region including dopants, the doped region adjacent to the first surface, the dopants include least one of boron or nitrogen, and the doped region comprises a bond between an atom of at least one of the dopants and a carbon atom.