公开(公告)号：US11960212B2

公开(公告)日：2024-04-16

申请号：US18088364

申请日：2022-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoduk Cho ,  Seongbo Shim ,  Hyungjong Bae ,  Chan Hwang

IPC: G03F7/00

CPC classification number: G03F7/702 ,  G03F7/70116 ,  G03F7/70504

Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.