公开(公告)号：US11063150B2

公开(公告)日：2021-07-13

申请号：US16413503

申请日：2019-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Min Yoo ,  Byung-Sung Kim ,  Ju-Youn Kim ,  Bong-Seok Suh ,  Hyung-Joo Na ,  Sung-Moon Lee ,  Joo-Ho Jung ,  Eui-Chul Hwang

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66

Abstract: A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.