METHOD OF RECOGNIZING CONTACTLESS USER INTERFACE MOTION AND SYSTEM THERE-OF
    2.
    发明申请
    METHOD OF RECOGNIZING CONTACTLESS USER INTERFACE MOTION AND SYSTEM THERE-OF 有权
    识别无缝用户界面运动的方法及其系统

    公开(公告)号:US20140078048A1

    公开(公告)日:2014-03-20

    申请号:US14030099

    申请日:2013-09-18

    CPC classification number: G06F3/0304 G06F3/011 G06F3/0325

    Abstract: A contactless user-interface (UI) motion recognizing device and method of controlling the same are provided. The method includes: obtaining a left-eye image and a right-eye image; determining an object position of an object in the obtained left-eye image and the obtained right-eye image; determining an object brightness of the object; determining depth information of the object using the determined object brightness; determining a three-dimensional (3D) object position of the object using the determined object position and the determined depth information; determining an object moving velocity based on the determined 3D object position and a previous 3D object position; and determining a UI pattern based on the determined 3D object position and the determined object moving velocity, and executing an operation according to the determined UI pattern.

    Abstract translation: 提供了一种非接触式用户界面(UI)运动识别装置及其控制方法。 该方法包括:获得左眼图像和右眼图像; 确定所获得的左眼图像和所获得的右眼图像中的对象的对象位置; 确定物体的物体亮度; 使用确定的对象亮度确定对象的深度信息; 使用所确定的对象位置和确定的深度信息来确定对象的三维(3D)对象位置; 基于所确定的3D对象位置和先​​前的3D对象位置来确定对象移动速度; 以及基于所确定的3D对象位置和所确定的对象移动速度来确定UI模式,以及根据所确定的UI模式执行操作。

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20250142931A1

    公开(公告)日:2025-05-01

    申请号:US18731426

    申请日:2024-06-03

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on the substrate, a plurality of nanosheets stacked to be spaced apart from each other in a vertical direction on the active pattern, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets, a source/drain region disposed on at least one side of the gate electrode on the active pattern, a first inner spacer disposed between the source/drain region and the gate electrode between the plurality of nanosheets, the first inner spacer being in contact with the source/drain region, and a second inner spacer disposed between the first inner spacer and the gate electrode between the plurality of nanosheets, the second inner spacer including a material different from a material of the first inner spacer, each of an upper surface and a lower surface of the second inner spacer being in contact with the first inner spacer.

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