公开(公告)号：US20220375505A1

公开(公告)日：2022-11-24

申请号：US17882790

申请日：2022-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Ji Yean KIM ,  Hyun Taek JUNG ,  Ji Eun KIM ,  Tae Seong KIM ,  Sang-Hoon JUNG ,  Jae Wook JOO

IPC: G11C11/16

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.

公开(公告)号：US20210027823A1

公开(公告)日：2021-01-28

申请号：US16848140

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Ji Yean KIM ,  Hyun Taek JUNG ,  Ji Eun KIM ,  Tae Seong KIM ,  Sang-Hoon JUNG ,  Jae Wook JOO

IPC: G11C11/16

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.

公开(公告)号：US20200312396A1

公开(公告)日：2020-10-01

申请号：US16814678

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk-Soo PYO ,  Hyun Taek JUNG

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02

Abstract: A nonvolatile memory device may comprise a memory cell comprising a first variable resistor having one end connected to a first node, and the other end connected to a second node through a cell transistor; and a reference cell comprising a second variable resistor having one end connected to a third node, and the other end connected to a fourth node through a reference cell transistor, wherein gates of the cell transistor and the reference cell transistor are connected to a word line. Directions of a first read current flowing in the memory cell and a direction of a second read current flowing in the reference cell are opposite to each other.