公开(公告)号：US09496328B2

公开(公告)日：2016-11-15

申请号：US14682518

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Bom Seo ,  Young Geun Park ,  Bong Hyun Kim ,  Sun Ho Kim ,  Hyun Jun Kim ,  Se Hyoung Ahn ,  Chang Mu An

IPC: H01L27/108 ,  H01L49/02 ,  B05D1/00

CPC classification number: H01L28/90 ,  B05D1/60 ,  H01L27/10814 ,  H01L27/10852

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract translation: 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。

公开(公告)号：US20160043163A1

公开(公告)日：2016-02-11

申请号：US14682518

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Bom Seo ,  Young Geun Park ,  Bong Hyun Kim ,  Sun Ho Kim ,  Hyun Jun Kim ,  Se Hyoung Ahn ,  Chang Mu An

IPC: H01L49/02

CPC classification number: H01L28/90 ,  B05D1/60 ,  H01L27/10814 ,  H01L27/10852

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract translation: 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。