公开(公告)号：US10050518B2

公开(公告)日：2018-08-14

申请号：US15196473

申请日：2016-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyoung-Taek Lim ,  Chung-Hyun Ryu

IPC: G11C14/00 ,  G11C16/30 ,  H02M3/04

Abstract: A power supply circuit may include a first power converter that may be configured to generate a first inner supply voltage having a first voltage level based on a first external supply voltage and to output the first inner supply voltage to a first node that is coupled to the first node, a second power converter that may be configured to generate a second inner supply voltage having the first voltage level based on a second external supply voltage and to output the second inner supply voltage to a second node that is coupled to the second node, a first diode that may include an anode coupled to the first node and a cathode coupled to the second node, and a second diode that may include an anode coupled to the second node and a cathode coupled to the first node.

公开(公告)号：US10768860B2

公开(公告)日：2020-09-08

申请号：US16550553

申请日：2019-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duk-Soo Kim ,  Jong-Wook Jeong ,  Hyoung-Taek Lim ,  Min-Woo Gu

IPC: G06F3/06 ,  G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  G06F12/02 ,  G06F13/16

Abstract: A data storage device, a method of operating the data storage device, and an electronic system including the data storage device are provided. The data storage device includes a controller mounted on a substrate, and a plurality of memory packages configured to be controlled by the controller and to transmit and receive data to and from the controller via M channels (where M is an integer of 1 to 16). When the data storage device is used, a phenomenon in which heat generation is concentrated locally may be mitigated.

公开(公告)号：US10423360B2

公开(公告)日：2019-09-24

申请号：US15905933

申请日：2018-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duk-Soo Kim ,  Jong-Wook Jeong ,  Hyoung-Taek Lim ,  Min-Woo Gu

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56

Abstract: A data storage device, a method of operating the data storage device, and an electronic system including the data storage device are provided. The data storage device includes a controller mounted on a substrate, and a plurality of memory packages configured to be controlled by the controller and to transmit and receive data to and from the controller via M channels (where M is an integer of 1 to 16). When the data storage device is used, a phenomenon in which heat generation is concentrated locally may be mitigated.

公开(公告)号：US11506741B2

公开(公告)日：2022-11-22

申请号：US17136074

申请日：2020-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suck-Hyun Nam ,  Min-Sung Kil ,  Hyoung-Taek Lim ,  Sang-Hoon Kim

IPC: G01R35/00 ,  G11C5/14 ,  H02J7/34 ,  G01R31/3835 ,  G01R27/32 ,  G01R1/28 ,  G01R27/28

Abstract: A method and apparatus are for monitoring a secondary power device and for accurately checking a state of the secondary power device, and an electronic system includes the apparatus. The method of monitoring a secondary power device includes setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device, setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter, and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.

公开(公告)号：US10908249B2

公开(公告)日：2021-02-02

申请号：US16298753

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suck-Hyun Nam ,  Min-Sung Kil ,  Hyoung-Taek Lim ,  Sang-Hoon Kim

IPC: G01R35/00 ,  G11C5/14 ,  H02J7/34 ,  G01R31/3835 ,  G01R27/32 ,  G01R1/28 ,  G01R27/28

Abstract: A method and apparatus for monitoring a secondary power device, for accurately checking a state of the secondary power device, and an electronic system including the apparatus are provided. The method of monitoring a secondary power device includes: setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device; setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter; and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.