公开(公告)号：US20220223604A1

公开(公告)日：2022-07-14

申请号：US17469349

申请日：2021-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanyeol PARK ,  Hwanwoo KIM ,  Jongkyu LEE ,  Chulhwan CHOI

IPC: H01L27/108 ,  H01L25/065

Abstract: A semiconductor structure of the inventive concepts includes a chip region comprising a plurality of semiconductor chips on the substrate; and a peripheral region at a periphery of the chip region, the peripheral region including a mold structure. The mold structure may include a base mold layer on the substrate, and a composite mold layer on the base mold layer, the composite mold layer comprising at least one bowing sacrificial layer and at least one bowing prevention layer.

公开(公告)号：US20220344166A1

公开(公告)日：2022-10-27

申请号：US17522193

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanyeol PARK ,  Jongyoung PARK ,  Yongdeok LEE ,  Sejin KYUNG ,  Daewee KONG ,  Ilwoo KIM ,  Songyi BAEK ,  Philippe COCHE

IPC: H01L21/308 ,  H01L21/02 ,  H01L49/02 ,  H01L21/768

Abstract: Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.

公开(公告)号：US20230074307A1

公开(公告)日：2023-03-09

申请号：US17852628

申请日：2022-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Kyungnam KANG ,  Jeonghoon NAM ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/46 ,  H05B3/12 ,  H05B3/28

Abstract: A substrate support unit includes: a ceramic body having a surface for supporting a substrate, the ceramic body including aluminum nitride (AlN), a heat generating resistor disposed in the ceramic body, and including molybdenum (Mo), and a coating layer surrounding the heat generating resistor, and including molybdenum aluminum nitride (MoAlN).

公开(公告)号：US20230081402A1

公开(公告)日：2023-03-16

申请号：US17899832

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Sejun PARK ,  Junhyoung CHO ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: H01L21/30

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface, forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate, bonding a deuterium exchange structure to the second surface of the substrate, implanting deuterium into the deuterium exchange structure using plasma processing, and applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.

公开(公告)号：US20230020305A1

公开(公告)日：2023-01-19

申请号：US17736229

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Kyung Nam KANG ,  Jeong Hoon NAM ,  Se Jin KYUNG ,  Dae Wee KONG ,  Tae-Min KIM

IPC: H01L21/67 ,  C23C16/30 ,  C22C21/00

Abstract: An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:
[Chemical Formula] MxAl1−xNy, wherein x and y satisfy the following relations: 0

公开(公告)号：US20220344367A1

公开(公告)日：2022-10-27

申请号：US17505842

申请日：2021-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanyeol PARK ,  Sejin KYUNG ,  Ilwoo KIM ,  Minwoo LEE ,  Youngho JEUNG

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: In a method of manufacturing a semiconductor device, a first insulation layer and a first sacrificial layer are alternately and repeatedly formed on a substrate to form a mold layer. A sacrificial layer structure is formed on the mold layer to include an etch stop layer and a second sacrificial layer sequentially stacked. After forming a hard mask on the sacrificial layer structure, the sacrificial layer structure and the mold layer are etched by a dry etching process using the hard mask as an etching mask to form a channel hole exposing an upper surface of the substrate and form a recess on a sidewall of the second sacrificial layer adjacent to the channel hole. A memory channel structure is formed in the channel hole. The first sacrificial layer is replaced with a gate electrode.