公开(公告)号：US20200312379A1

公开(公告)日：2020-10-01

申请号：US16591061

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongsoon Lim ,  Hojoon Kim ,  Sang-won Park ,  Sang-won Shim ,  Wonbo Shim

IPC: G11C5/02 ,  G11C8/08 ,  G11C8/06 ,  G11C8/18 ,  G11C5/06 ,  G11C7/18 ,  G11C8/14

Abstract: A semiconductor memory device includes a substrate, first memory cells that are connected to first word lines extending along a first direction and first bit lines extending along a second direction, over the substrate, first conductive materials that are connected to the first word lines and extend from the first word lines along a third direction perpendicular to the first direction and the second direction, second conductive materials that are connected to the first bit lines and extend along the first direction over the first bit lines, and third conductive materials that are connected to the second conductive materials and extend from the second conductive materials along the third direction.

公开(公告)号：US11011208B2

公开(公告)日：2021-05-18

申请号：US16591061

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongsoon Lim ,  Hojoon Kim ,  Sang-won Park ,  Sang-won Shim ,  Wonbo Shim

IPC: G11C5/02 ,  G11C8/08 ,  G11C8/06 ,  G11C8/14 ,  G11C5/06 ,  G11C7/18 ,  G11C8/18

Abstract: A semiconductor memory device includes a substrate, first memory cells that are connected to first word lines extending along a first direction and first bit lines extending along a second direction, over the substrate, first conductive materials that are connected to the first word lines and extend from the first word lines along a third direction perpendicular to the first direction and the second direction, second conductive materials that are connected to the first bit lines and extend along the first direction over the first bit lines, and third conductive materials that are connected to the second conductive materials and extend from the second conductive materials along the third direction.