公开(公告)号：US20240379550A1

公开(公告)日：2024-11-14

申请号：US18641698

申请日：2024-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heeseop Kim ,  Gunho Jo ,  Bomi Kim ,  Eunho Cho

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/485 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a substrate having an active region extending in a first direction, a gate structure on the active region, intersecting the active region and extending in a second direction, a source/drain region adjacent the gate structure and on the active region, a contact plug on the source/drain region and electrically connected to the source/drain regions, a first power structure on one side of the source/drain region in the second direction and electrically connected to the contact plug, and a second power structure penetrating the substrate and on a lower end of the first power structure. The first power structure and the second power structure are integrated as a unitary structure, and the first power structure has a first width at an upper thereof and a second width at the lower end thereof, the second width being equal to or greater than the first width.