公开(公告)号：US20240203980A1

公开(公告)日：2024-06-20

申请号：US18482680

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongeun CHO ,  Hyunjeong ROH ,  Kibum KIM ,  Seonkyeong KIM ,  Hayoung KIM

IPC: H01L27/02 ,  H01L21/8234 ,  H01L23/48 ,  H02H9/04 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L27/0292 ,  H01L21/823475 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H02H9/046 ,  H01L24/05 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L2224/0557 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544

Abstract: A semiconductor device includes: a first I/O interface cell region having a plurality of first electrostatic discharge (ESD) diodes, a first driver and a first through silicon via (TSV) disposed therein and having first wiring patterns and first via patterns for electrically connecting the plurality of first ESD diodes, the first driver and the first TSV; and a second I/O interface cell region having a plurality of second ESD diodes, a second driver and a second TSV disposed therein and having second wiring patterns and second via patterns for electrically connecting the second driver, the second TSV and a subset of the plurality of second ESD diodes, wherein the second ESD diodes other than the subset are separated from the second driver and the second TSV.

公开(公告)号：US20240203977A1

公开(公告)日：2024-06-20

申请号：US18475881

申请日：2023-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongeun CHO ,  Kibum KIM ,  Seonkyeong KIM ,  Hayoung KIM ,  Hyunjeong ROH

IPC: H01L27/02 ,  H01L23/48

CPC classification number: H01L27/0255 ,  H01L23/481 ,  H01L27/0207

Abstract: A semiconductor device may include a substrate including a Keep-Out Zone (KOZ) and a layout finishing cell region, a through silicon via (TSV) penetrating the substrate and surrounded by the KOZ; an ESD diode on an upper surface of the substrate, a driver circuit, gate structures, and metal wirings electrically connecting the TSV, the ESD diode, and the driver circuit. The layout finishing cell region may surround the KOZ and the ESD diode. The driver circuit may be adjacent to and outside the layout finishing cell region. The substrate may include active regions extending from an end inside the layout finishing cell region. The gate structures may intersect the active regions to form semiconductor components. The driver circuit may include at least some of the semiconductor components.

公开(公告)号：US20220129924A1

公开(公告)日：2022-04-28

申请号：US17432802

申请日：2019-12-26

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Laura KANG ,  Hayoung KIM

IPC: G06Q30/02 ,  G06N3/08 ,  G06N3/04

Abstract: An electronic device and a control method therefor are provided. The electronic device comprises: a memory in which a first AI model and a second AI model are stored; and a processor which: acquires data indicating ratios of monthly predicted sales of respective products to monthly predicted sales amounts of multiple products within a particular period after a current time point by using the first AI model; acquires data indicating a ratio of monthly predicted sales of multiple products to all sales amounts of multiple products within a particular period after a current time point by using the second AI model; and calculates ratios of monthly predicted sales of respective products to all predicted sales amounts of multiple products within a particular period based on the acquired data.

公开(公告)号：US20170083829A1

公开(公告)日：2017-03-23

申请号：US15161906

申请日：2016-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoa KANG ,  Hayoung KIM

IPC: G06N99/00

CPC classification number: G06N3/0454 ,  G06N3/084

Abstract: Disclosed herein are a model training method, a data recognizing method, and a model training apparatus. A model training method includes selecting a teacher model from a plurality of teacher models; receiving, at a student model, input data; and training the student model based on output data of the selected teacher model, the output data corresponding to the input data.