公开(公告)号：US10930740B2

公开(公告)日：2021-02-23

申请号：US16546506

申请日：2019-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hae-in Jung ,  Moon-young Jeong ,  Joon Han ,  Satoru Yamada

IPC: H01L29/10 ,  H01L27/02 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L27/11573 ,  H01L27/108 ,  H01L21/8234 ,  H01L21/306 ,  H01L27/11526 ,  H01L27/088

Abstract: Provided are a multi-direction channel transistor having a gate having an increased effective width and a multi-direction channel, and a semiconductor device including the multi-direction channel transistor, wherein the multi-direction channel transistor includes at least one fin on an active region on a substrate and disposed adjacent to a recess extending in a first direction; a gate line extending in a second direction crossing the first direction and covering at least a portion of the at least one fin and the recess; source/drain regions on the active region at both sides of the gate line; and a channel region in the active region under the gate line between the source/drain regions, wherein the first direction is diagonal to the second direction, and a dielectric film under the gate line has substantially the same thickness on both the at least one fin and the recess.