公开(公告)号：US09627469B2

公开(公告)日：2017-04-18

申请号：US14972903

申请日：2015-12-17

申请人： Samsung Electronics Co., Ltd.

发明人： Ha-young Yi ,  Jun-won Lee ,  Byoung-deog Choi ,  Jong-myeong Lee ,  Mun-jun Kim ,  Hong-gun Kim

IPC分类号： H01L29/40 ,  H01L49/02

CPC分类号： H01L28/91 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76828 ,  H01L23/5223 ,  H01L23/53295

摘要： A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

公开(公告)号：US11810947B2

公开(公告)日：2023-11-07

申请号：US17536524

申请日：2021-11-29

申请人： Samsung Electronics Co., Ltd.

发明人： Hyukwoo Kwon ,  Ha-young Yi ,  Byoungdeog Choi ,  Seongmin Choo

IPC分类号： H01L45/00 ,  H01L49/02 ,  H01L21/311 ,  H10B12/00

CPC分类号： H01L28/90 ,  H01L21/31116 ,  H01L21/31144 ,  H01L28/92 ,  H10B12/033

摘要： A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.

公开(公告)号：US11626476B2

公开(公告)日：2023-04-11

申请号：US17094104

申请日：2020-11-10

申请人： Samsung Electronics Co., Ltd.

发明人： Ha-young Yi ,  Youn-seok Choi ,  Young-min Ko ,  Mun-jun Kim ,  Hong-gun Kim ,  Seung-Heon Lee

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US10170541B2

公开(公告)日：2019-01-01

申请号：US15601186

申请日：2017-05-22

申请人： Samsung Electronics Co., Ltd.

发明人： Ha-young Yi ,  Youn-seok Choi ,  Young-min Ko ,  Mun-jun Kim ,  Hong-gun Kim ,  Seung-heon Lee

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20160343799A1

公开(公告)日：2016-11-24

申请号：US14972903

申请日：2015-12-17

申请人： Samsung Electronics Co., Ltd.

发明人： Ha-young Yi ,  Jun-won Lee ,  Byoung-deog Choi ,  Jong-myeong Lee ,  Mun-jun Kim ,  Hong-gun Kim

IPC分类号： H01L49/02

CPC分类号： H01L28/91 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76828 ,  H01L23/5223 ,  H01L23/53295

摘要： A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

摘要翻译： 掺杂的模具膜在掺杂的模具膜中形成掺杂剂浓度梯度，其厚度方向连续变化，并且在厚度方向上蚀刻一部分掺杂的模具膜以形成孔，从而沿着 孔的内壁。 如此形成的电极包括第一外壁表面，第二外壁表面和第三外壁表面，其中第一外壁表面与形成在通孔中的通孔中的基板上形成的绝缘图案的侧壁接触 绝缘图案; 所述第二外壁表面与所述绝缘图案的顶表面接触并沿横向方向延伸; 所述第三外壁表面与所述第一外壁表面间隔开，而所述第二外壁表面之间具有第二外壁表面; 并且第三外壁表面在远离基底的方向上在绝缘图案上延伸。