公开(公告)号：US20220293600A1

公开(公告)日：2022-09-15

申请号：US17522051

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHEOL KIM ,  JONGCHUL PARK ,  HYUNHO JUNG

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second active regions. A first active pattern is on the first active region and includes first source/drain patterns and a first channel pattern therebetween. A second active pattern is on the second active region and includes second source/drain patterns and a second channel pattern therebetween. A gate electrode includes a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern. A gate cutting pattern is between the first and second gate electrodes and separates the first and second gate electrodes from each other. A pair of gate spacers is on opposite sidewalls of the first gate electrode extending along opposite sidewalls of the gate cutting pattern towards the second gate electrode. The gate cutting pattern includes first to third parts having maximum widths that increase from the first to the third part.

公开(公告)号：US20180240881A1

公开(公告)日：2018-08-23

申请号：US15692560

申请日：2017-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNHO JUNG ,  JEONGYUN LEE ,  TAESOON KWON ,  KYUNGSEOK MIN ,  GEUMJUNG SEONG ,  BORA LIM ,  A-REUM JI ,  SEUNGSOO HONG

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L29/4236 ,  H01L27/0924 ,  H01L29/0653

Abstract: A semiconductor device can include a first active pattern on a substrate, the first active pattern including a plurality of first active regions that protrude from the substrate. A second active pattern can be on the substrate including a plurality of second active regions that protrude from the substrate. A first gate electrode can include an upper portion that extends over the first active pattern at a first height and include a recessed portion that extends over the first active pattern at a second height that is lower than the first height of the first gate electrode. A second gate electrode can include an upper portion that extends over the second active pattern at a first height and include a recessed portion that extends over the second active pattern at a second height that is lower than the first height of the second gate electrode. An insulation pattern can be located between, and directly adjacent to, the recessed portion of the first gate electrode and the recessed portion of the second gate electrode, the insulation pattern electrically isolating the first and second gate electrodes from one another.