公开(公告)号：US20140338600A1

公开(公告)日：2014-11-20

申请号：US14259433

申请日：2014-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Cheol LEE ,  Beom-Seok KIM ,  Suk-JIn CHUNG ,  Geun-Kyu CHOI

IPC: C23C16/44

CPC classification number: C23C16/4412

Abstract: An exhausting apparatus includes an exhaust pump configured to extract unreacted precursor in a process chamber and vent the unreacted precursor out of the exhaust pump, and a first material supplier configured to supply a first material into the exhaust pump. The first material is adsorbable on an interior surface of the exhaust pump to prevent the unreacted precursor from being adsorbed on the interior surface of the exhaust pump.

Abstract translation: 排气装置包括排气泵，所述排气泵构造成在处理室中提取未反应的前体并将未反应的前体排出所述排气泵;以及第一材料供应器，其被配置为将第一材料供应到所述排气泵中。 第一材料可吸附在排气泵的内表面上，以防止未反应的前体被吸附在排气泵的内表面上。

公开(公告)号：US20190091828A1

公开(公告)日：2019-03-28

申请号：US15926244

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk-Hoon JEONG ,  Sang-Hak LEE ,  Geun-Kyu CHOI ,  Chang-Sun HWANG ,  Tae-Young KWON ,  Young-Sang KIM ,  Hyung-Kyu JIN ,  Jeong-Nam HAN

IPC: B24B37/015 ,  B24B37/26 ,  B24B49/14 ,  B24B55/02

CPC classification number: B24B37/015 ,  B24B37/26 ,  B24B49/14 ,  B24B55/02

Abstract: A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.

公开(公告)号：US20140145306A1

公开(公告)日：2014-05-29

申请号：US14170758

申请日：2014-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-Don KIM ,  Beom-Seok KIM ,  Yong-Suk TAK ,  Kyu-Ho CHO ,  Seung-hwan LEE ,  Oh-Seong KWON ,  Geun-Kyu CHOI

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L24/32 ,  H01L28/90 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/8385

Abstract: A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.

Abstract translation: 多个金属图案设置在基板上。 在多个金属图案之间提供支撑结构。 支撑结构具有支撑体和胶层。 当从横截面视图观察时，多个金属图案中的每一个具有比基板上的水平长度更大的垂直长度。 该支架具有至少4.5eV的带隙能量。 胶层与多个金属图案接触。 支撑体和胶层由不同的材料形成。