公开(公告)号：US20250098153A1

公开(公告)日：2025-03-20

申请号：US18657892

申请日：2024-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taegyu Kang ,  Joongchan Shin ,  Keunui Kim ,  Myeongseon Kim ,  Eunsuk Jang

IPC: H10B12/00

Abstract: A semiconductor device includes: a bit line on a substrate and extending in a first direction; a first word line on the bit line extending in a second direction crossing the first direction; a second word line extending in the second direction on the bit line and spaced from the first word line; first activating patterns on the bit line between the first and second word lines; second activating patterns on the bit line between the first and second word lines; a back gate electrode crossing the bit line and extending in the second direction between the first and second activating patterns; and first and second back gate capping patterns overlapping the back gate electrode. The first back gate capping pattern defines a gap region on the back gate electrode not overlapping the first and second activating patterns, and the second back gate capping pattern is in the gap region.