公开(公告)号：US20240147722A1

公开(公告)日：2024-05-02

申请号：US18331397

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byongju Kim ,  Dongsung Choi ,  Wonjun Park ,  Donghwa Lee ,  Jaemin Jung ,  Changheon Cheon

IPC: H10B43/27 ,  H01L23/528 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  H10B80/00

CPC classification number: H10B43/27 ,  H01L23/5283 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  H10B80/00 ,  H01L2225/06551

Abstract: A semiconductor device may include a gate stack that includes a first insulating pattern, a second insulating pattern adjacent to the first insulating pattern, a third insulating pattern adjacent to the second insulating pattern, a first conductive pattern between the first and second insulating patterns, and a second conductive pattern between the second and third insulating patterns, a channel layer that extends in the gate stack, a tunnel insulating layer on the channel layer, and a first data storage pattern and a second data storage pattern on the tunnel insulating layer. The first data storage pattern may include a first outer portion between the first and second insulating patterns, and a first inner portion on the first outer portion.

公开(公告)号：US20240074195A1

公开(公告)日：2024-02-29

申请号：US18308262

申请日：2023-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byongju Kim ,  Dongsung Choi ,  Wonjun Park ,  Donghwa Lee ,  Jaemin Jung ,  Changheon Cheon

IPC: H10B43/27 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes a conductive pattern, an insulating pattern, a channel film extending in a vertical direction inside a channel hole, a charge trap pattern between the conductive pattern and the channel film inside the channel hole, a tunneling dielectric film between the charge trap pattern and the channel film, and a blocking dielectric film extending between the conductive pattern and the charge trap pattern and between the insulating pattern and the tunneling dielectric film. The insulating pattern includes a first insulating pattern overlapping the conductive pattern in the vertical direction and a second insulating pattern protruding in the lateral direction from the first insulating pattern into the channel hole and toward the channel film. The first insulating pattern has a first dielectric constant, and the second insulating pattern has a second dielectric constant that is lower than the first dielectric constant.