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    Manufacturing method of a semiconductor device
    1.
    发明授权
    Manufacturing method of a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US09087858B2

    公开(公告)日：2015-07-21

    申请号：US14331403

    申请日：2014-07-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung-Han Yoo ,  Dong-Kyu Lee

    IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088

    CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/8238 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/66787 ,  H01L29/66803

    Abstract: Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern.

    Abstract translation: 提供一种半导体器件的制造方法，包括提供包括第一区域和第二区域的衬底，在第一区域和第二区域中形成有源鳍状物，形成与活性鳍片相交的栅极，并且具有面向 形成覆盖有源翅片的偏置零（OZ）绝缘层，形成第一残留蚀刻停止层和覆盖第一区域的第一硬掩模图案，将第一杂质注入第二区域的活性鳍片中， 去除第一硬掩模图案和第一残留蚀刻停止层，形成第二残留蚀刻停止层和覆盖第二区域的第二硬掩模图案，将第二杂质注入到第一区域的活性鳍片中，以及去除第二残留物 蚀刻停止层和第二硬掩模图案。

    MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
    3.
    发明申请
    MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20150037956A1

    公开(公告)日：2015-02-05

    申请号：US14331403

    申请日：2014-07-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung-Han Yoo ,  Dong-Kyu Lee

    IPC: H01L29/66

    CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/8238 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/66787 ,  H01L29/66803

    Abstract: Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern.

    Abstract translation: 提供一种半导体器件的制造方法，包括提供包括第一区域和第二区域的衬底，在第一区域和第二区域中形成有源鳍状物，形成与活性鳍片相交的栅极，并且具有面向 形成覆盖有源翅片的偏置零（OZ）绝缘层，形成第一残留蚀刻停止层和覆盖第一区域的第一硬掩模图案，将第一杂质注入第二区域的活性鳍片中， 去除第一硬掩模图案和第一残留蚀刻停止层，形成第二残留蚀刻停止层和覆盖第二区域的第二硬掩模图案，将第二杂质注入到第一区域的活性鳍片中，以及去除第二残留物 蚀刻停止层和第二硬掩模图案。

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